|
|
| Freescale’s MR2A16A 4 Mbit MRAM |
|
|
| Micrograph of multiple 4 Mbit die on a silicon wafer |
AUSTIN, Texas–July 10, 2006–The first commercial Magnetoresistive Random Access Memory (MRAM) device is now in volume production and available from Freescale Semiconductor (NYSE:FSL) (NYSE:FSL.B).
Freescale’s four megabit (Mbit) MRAM product is a fast, non-volatile memory with unlimited endurance – a combination of characteristics not available in any other individual semiconductor memory product. The device is built on a foundation of technology protected by more than 100 Freescale patents, including toggle-bit switching.
“With the commercialization of MRAM, Freescale is the first-to-market with a technology of tremendous possibilities and profound implications,” said Bob Merritt, Semico Research. “Competition to become the first company to market MRAM technology was fierce. This is a significant achievement that certainly confirms the dedication of Freescale’s engineering team.”
MRAM uses magnetic materials combined with conventional silicon circuitry to deliver the speed of SRAM with the non-volatility of Flash in a single, high endurance device. Freescale’s successful commercialization of this technology could hasten new classes of electronic products offering dramatic advances in size, cost, power consumption and system performance.
“The commercial launch of the industry’s first MRAM product is a major milestone made possible by the pioneering research of Freescale technologists. It underscores our commitment to deliver breakthrough technology to our customers to address real-world challenges,” said Sumit Sadana, senior vice president, Strategy and Business Development, and Chief Technology Officer, Freescale. “The unique capabilities of MRAM technology have numerous exciting applications in our target markets.”
Freescale’s first commercial MRAM product, called the MR2A16A, is appropriate for a variety of commercial applications such as networking, security, data storage, gaming and printers. The part is engineered to be a reliable, economical, single-component replacement for battery-backed SRAM units. The device also could be used in cache buffers, configuration storage memories and other applications that require the speed, endurance and non-volatility of MRAM.
About the MR2A16A
The MR2A16A is a commercial temperature range, 3.3 volt device featuring 35 nanosecond read and write cycle times. It is an asynchronous memory organized as 256K words by 16 bits. An industry standard SRAM pinout arrangement allows for system design flexibility without bus contention. The device is housed in a 400 mil TSOP type-II RoHS package. It is manufactured at Freescale’s 200 millimeter Chandler Fab in Arizona.
Availability
The MR2A16A MRAM is available now from Freescale (www.freescale.com) and selected distributors.
About Freescale Semiconductor
Freescale Semiconductor, Inc. (NYSE:FSL, FSL.B) is a global leader in the design and manufacture of embedded semiconductors for the automotive, consumer, industrial, networking and wireless markets. Freescale became a publicly traded company in July 2004 after more than 50 years as part of Motorola, Inc. The company is based in Austin, Texas, and has design, research and development, manufacturing or sales operations in more than 30 countries. Freescale, a member of the S&P 500(R), is one of the world’s largest semiconductor companies with 2005 sales of $5.8 billion (USD). www.freescale.com